Boron-Doped Poly-Si Wafers for Power Semiconductors
Polycrystalline silicon wafers doped with boron to achieve p-type conductivity, designed for manufacturing power transistors and diodes in electronics. Classified under HTS 3818.00.0020 due to their doped chemical element composition in wafer form tailored for electronic applications. The doping enables specific electrical properties required for high-voltage components.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If further processed into integrated circuits
Wafers integrated into processors or ICs become electronic integrated circuits rather than raw doped elements.
If considered semiconductor manufacturing preparations
Some doped intermediates may fall under chemical preparations for semiconductor fab if not pure wafers.
If supplied as part of semiconductor manufacturing machines
When imported as machine parts, classification shifts to machinery components.
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Import Tips & Compliance
• Provide dopant concentration reports (e.g
• 10^15 atoms/cm³) and wafer specs to avoid reclassification
• Ensure compliance with USITC semiconductor import quotas if applicable; label as 'not for defense use' if civilian
• Use vacuum-sealed packaging to maintain surface cleanliness; beware of tariffs from specific origins
Related Products under HTS 3818.00.00.20
Doped Polycrystalline Silicon Solar Wafers
Polycrystalline silicon wafers that have been doped with phosphorus or boron to enhance electrical conductivity, primarily used in photovoltaic solar cell production. These wafers fall under HTS 3818.00.0020 as chemical elements doped for use in electronics, specifically in disc or wafer form for semiconductor applications. The doping process introduces impurities to create p-n junctions essential for solar energy conversion.
P-Type Doped Polycrystalline Silicon Wafers 6-inch
6-inch diameter polycrystalline silicon wafers with p-type doping for fabrication of MOSFETs and IGBTs in consumer electronics. Classified in HTS 3818.00.0020 for their role as doped silicon elements in wafer form for electronic use. Doping ensures reliable semiconductor performance.
156mm Phosphorus-Doped Poly Wafers for PV Modules
Standard 156mm polycrystalline silicon wafers phosphorus-doped for commercial solar PV module production. HTS 3818.00.0020 applies to these doped silicon discs optimized for electronics in renewable energy. Uniform doping ensures high cell efficiency.
Arsenic-Doped Polycrystalline Silicon Wafers
Polycrystalline silicon wafers with arsenic doping for high-mobility n-type applications in RF electronics. Covered by HTS 3818.00.0020 for doped electronic-grade silicon wafers. Arsenic provides superior electron mobility for fast-switching devices.
Phosphorus-Doped Polycrystalline Silicon Wafers
Wafers made from polycrystalline silicon doped with phosphorus for n-type semiconductor properties, used in thin-film transistors and sensors. They are specifically covered by HTS 3818.00.0020 as doped chemical elements in electronic-grade wafer forms. Doping creates the necessary charge carriers for electronic functionality.
N-Type Doped Poly Silicon Wafers for Solar Inverters
N-type polycrystalline silicon wafers doped for use in power electronics of solar inverters and converters. Falls under HTS 3818.00.0020 as doped discs for electronics, with doping optimized for high-efficiency power switching. Essential for renewable energy infrastructure.