Boron-Doped Poly-Si Wafers for Power Semiconductors from Japan
Polycrystalline silicon wafers doped with boron to achieve p-type conductivity, designed for manufacturing power transistors and diodes in electronics. Classified under HTS 3818.00.0020 due to their doped chemical element composition in wafer form tailored for electronic applications. The doping enables specific electrical properties required for high-voltage components.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide dopant concentration reports (e.g
• 10^15 atoms/cm³) and wafer specs to avoid reclassification
• Ensure compliance with USITC semiconductor import quotas if applicable; label as 'not for defense use' if civilian
• Use vacuum-sealed packaging to maintain surface cleanliness; beware of tariffs from specific origins