Doped Polycrystalline Silicon Solar Wafers
Polycrystalline silicon wafers that have been doped with phosphorus or boron to enhance electrical conductivity, primarily used in photovoltaic solar cell production. These wafers fall under HTS 3818.00.0020 as chemical elements doped for use in electronics, specifically in disc or wafer form for semiconductor applications. The doping process introduces impurities to create p-n junctions essential for solar energy conversion.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If assembled into finished solar cells
Once processed into photovoltaic cells, they shift from doped chemical elements to photosensitive semiconductor devices.
If monocrystalline instead of polycrystalline
Monocrystalline doped silicon wafers are classified separately within the same heading but different subheading.
If imported as unwrought silicon rods before wafering
Undoped or pure silicon in primary forms like chunks or rods falls under silicon as a chemical element.
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Import Tips & Compliance
• Obtain certificates of analysis confirming doping levels and purity to meet US semiconductor import standards
• Comply with REACH-like regulations for chemical dopants; declare wafer thickness and resistivity accurately
• Avoid misclassification by specifying polycrystalline structure; use ESD-safe packaging to prevent damage
Related Products under HTS 3818.00.00.20
Boron-Doped Poly-Si Wafers for Power Semiconductors
Polycrystalline silicon wafers doped with boron to achieve p-type conductivity, designed for manufacturing power transistors and diodes in electronics. Classified under HTS 3818.00.0020 due to their doped chemical element composition in wafer form tailored for electronic applications. The doping enables specific electrical properties required for high-voltage components.
P-Type Doped Polycrystalline Silicon Wafers 6-inch
6-inch diameter polycrystalline silicon wafers with p-type doping for fabrication of MOSFETs and IGBTs in consumer electronics. Classified in HTS 3818.00.0020 for their role as doped silicon elements in wafer form for electronic use. Doping ensures reliable semiconductor performance.
156mm Phosphorus-Doped Poly Wafers for PV Modules
Standard 156mm polycrystalline silicon wafers phosphorus-doped for commercial solar PV module production. HTS 3818.00.0020 applies to these doped silicon discs optimized for electronics in renewable energy. Uniform doping ensures high cell efficiency.
Arsenic-Doped Polycrystalline Silicon Wafers
Polycrystalline silicon wafers with arsenic doping for high-mobility n-type applications in RF electronics. Covered by HTS 3818.00.0020 for doped electronic-grade silicon wafers. Arsenic provides superior electron mobility for fast-switching devices.
Phosphorus-Doped Polycrystalline Silicon Wafers
Wafers made from polycrystalline silicon doped with phosphorus for n-type semiconductor properties, used in thin-film transistors and sensors. They are specifically covered by HTS 3818.00.0020 as doped chemical elements in electronic-grade wafer forms. Doping creates the necessary charge carriers for electronic functionality.
N-Type Doped Poly Silicon Wafers for Solar Inverters
N-type polycrystalline silicon wafers doped for use in power electronics of solar inverters and converters. Falls under HTS 3818.00.0020 as doped discs for electronics, with doping optimized for high-efficiency power switching. Essential for renewable energy infrastructure.