Silicon Schottky Barrier Diode 1N5819

The 1N5819 is a Schottky barrier diode made from silicon semiconductor material, used for low-voltage rectification in power supplies and converters. It falls under HTS 8541.59.00.80 as an 'other' semiconductor device that is neither a photodiode, photovoltaic cell, nor LED. This classification covers discrete diodes beyond basic types.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFree+50.0%50%
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡¨πŸ‡¦CanadaFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8541.10.00Same rate: 50%

If photosensitive or photovoltaic

Photosensitive semiconductor devices like photodiodes shift to 8541.10 for light detection functions

8541Same rate: 50%

If assembled as LED display modules

LEDs assembled with other LEDs for displays move to 8541.40, excluding single discrete LEDs

8542.31.00Same rate: 50%

If integrated into processor circuits

Devices as integral parts of semiconductor processors classified under 8542.31 instead of discrete components

Not sure which classification is right?

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Import Tips & Compliance

β€’ Verify RoHS and REACH compliance certifications as semiconductors face strict environmental regulations; declare exact electrical specs (voltage, current) to avoid misclassification; obtain supplier test data for customs valuation

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