Silicon Avalanche Diode 1N5919

The 1N5919 avalanche diode provides transient voltage suppression in telecom equipment and automotive electronics. Classified HTS 8541.59.00.80 as other semiconductor device using avalanche breakdown for protection. Higher voltage handling than Zener types.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFree+50.0%50%
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡¨πŸ‡¦CanadaFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8535.90.40Lower: 37.7% vs 50%

If in complete surge suppressor assembly

Apparatus for surge suppression containing diodes use 8535.90 classification

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Related Products under HTS 8541.59.00.80

Silicon Schottky Barrier Diode 1N5819

The 1N5819 is a Schottky barrier diode made from silicon semiconductor material, used for low-voltage rectification in power supplies and converters. It falls under HTS 8541.59.00.80 as an 'other' semiconductor device that is neither a photodiode, photovoltaic cell, nor LED. This classification covers discrete diodes beyond basic types.

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The IRF540N is an N-channel enhancement-mode power MOSFET semiconductor device used for switching and amplification in motor drives and inverters. Classified under HTS 8541.59.00.80 as 'other' semiconductor devices, it functions as a transistor variant not specified elsewhere. Its silicon construction enables high-speed switching.

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