Silicon Schottky Barrier Diode 1N5819 from China
The 1N5819 is a Schottky barrier diode made from silicon semiconductor material, used for low-voltage rectification in power supplies and converters. It falls under HTS 8541.59.00.80 as an 'other' semiconductor device that is neither a photodiode, photovoltaic cell, nor LED. This classification covers discrete diodes beyond basic types.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Verify RoHS and REACH compliance certifications as semiconductors face strict environmental regulations; declare exact electrical specs (voltage, current) to avoid misclassification; obtain supplier test data for customs valuation