Silicon Schottky Barrier Diode 1N5819 from Mexico
The 1N5819 is a Schottky barrier diode made from silicon semiconductor material, used for low-voltage rectification in power supplies and converters. It falls under HTS 8541.59.00.80 as an 'other' semiconductor device that is neither a photodiode, photovoltaic cell, nor LED. This classification covers discrete diodes beyond basic types.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Verify RoHS and REACH compliance certifications as semiconductors face strict environmental regulations; declare exact electrical specs (voltage, current) to avoid misclassification; obtain supplier test data for customs valuation