InGaAs Photodiode
Indium Gallium Arsenide photodiode for near-infrared light detection in telecommunications and spectroscopy. Falls under HTS 8541.49.95.00 as other photosensitive semiconductor devices. Discrete component without photovoltaic power generation or LED emission capability.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | +50.0% | 50% |
| π²π½Mexico | Free | β | Free |
| π¨π¦Canada | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If imported as parts of photosensitive semiconductor devices
Unfinished components/parts of photosensitive devices classified separately.
If for laser system integration as complete optical detector
Assembled into laser apparatus shifts to Chapter 90 optical instruments.
If designed specifically for digital camera image capture
Camera-specific image sensors fall under Chapter 85 television/digital camera provisions.
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Import Tips & Compliance
β’ Provide wavelength response curves to distinguish from photovoltaic cells during customs review
β’ Hazardous material declarations required for Arsenide compounds under DOT regulations
β’ Static-sensitive packaging mandatory to prevent damage claims at entry
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