InGaAs Photodiode from China
Indium Gallium Arsenide photodiode for near-infrared light detection in telecommunications and spectroscopy. Falls under HTS 8541.49.95.00 as other photosensitive semiconductor devices. Discrete component without photovoltaic power generation or LED emission capability.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Provide wavelength response curves to distinguish from photovoltaic cells during customs review
• Hazardous material declarations required for Arsenide compounds under DOT regulations
• Static-sensitive packaging mandatory to prevent damage claims at entry