InGaAs Photodiode from Mexico
Indium Gallium Arsenide photodiode for near-infrared light detection in telecommunications and spectroscopy. Falls under HTS 8541.49.95.00 as other photosensitive semiconductor devices. Discrete component without photovoltaic power generation or LED emission capability.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide wavelength response curves to distinguish from photovoltaic cells during customs review
• Hazardous material declarations required for Arsenide compounds under DOT regulations
• Static-sensitive packaging mandatory to prevent damage claims at entry