8542.32.00.28/Samsung K4B2G1646D-BCK0 8Gb DDR3L DRAM Chip/Japan

Samsung K4B2G1646D-BCK0 8Gb DDR3L DRAM Chip from Japan

This is a 512 megabit (8Gb density) DDR3L low voltage dynamic random access memory integrated circuit designed for mobile and embedded applications. It falls under HTS 8542.32.0028 because it is a DRAM memory chip with capacity over 256 megabits but not exceeding 512 megabits per the tariff classification. These chips are commonly used in smartphones, tablets, and IoT devices for temporary data storage.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Verify exact memory capacity via datasheet to confirm 8542.32.0028 classification; obtain supplier's certificate of conformance for silicon capacity specs

• Declare as individual ICs not mounted on boards to avoid misclassification as assemblies

• Comply with REACH/RoHS regulations with proper documentation

Samsung K4B2G1646D-BCK0 8Gb DDR3L DRAM Chip from Japan — Import Duty Rate | HTS 8542.32.00.28