Over 256 megabits but not over 512 megabits
Electronic integrated circuits; parts thereof: > Electronic integrated circuits: > Memories > Dynamic read-write random access (DRAM): > Over 256 megabits but not over 512 megabits
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8542.32.00.28
Samsung K4B2G1646D-BCK0 8Gb DDR3L DRAM Chip
This is a 512 megabit (8Gb density) DDR3L low voltage dynamic random access memory integrated circuit designed for mobile and embedded applications. It falls under HTS 8542.32.0028 because it is a DRAM memory chip with capacity over 256 megabits but not exceeding 512 megabits per the tariff classification. These chips are commonly used in smartphones, tablets, and IoT devices for temporary data storage.
Micron MT41K256M16HA-125 DDR4 4Gb DRAM IC
A 512 megabit DDR4 synchronous dynamic random access memory chip optimized for high-performance computing applications like servers and graphics cards. Classified under HTS 8542.32.0028 due to its DRAM technology and capacity range exceeding 256 but not over 512 megabits. This IC provides high-speed data access for demanding memory-intensive workloads.
SK Hynix H5TQ4G63AFR-RDC 512Mx8 GDDR5 DRAM Chip
Graphics Double Data Rate 5 (GDDR5) DRAM integrated circuit with 512 megabit capacity per die, used in high-end graphics processing units and gaming consoles. This product qualifies for HTS 8542.32.0028 as a dynamic read-write random access memory within the specified megabit range. It supports ultra-high bandwidth requirements for real-time graphics rendering.
512Mb LPDDR2 Mobile DRAM S9KLHBG08K2CA
Low Power DDR2 synchronous DRAM chip designed for smartphones and portable devices, featuring 512 megabit capacity with power-saving architecture. Falls under HTS 8542.32.0028 as it meets the DRAM classification criteria for memory capacity between 256 and 512 megabits. Essential for mobile computing with optimized power consumption.
DDR3L 512Mbit Automotive Grade DRAM AS4C256M16D3L-60BCN
Automotive-qualified DDR3L DRAM chip with 512 megabit capacity, designed for extended temperature range (-40°C to 105°C) and high reliability in vehicle electronics. Classified under HTS 8542.32.0028 for its DRAM memory type and specified capacity range. Used in ADAS systems, infotainment, and engine control modules.
512 Megabit SDRAM Chip for Printers KM416S4030CT-G8
Single Data Rate Synchronous DRAM integrated circuit with 512 megabit capacity, optimized for laser printer and multifunction device buffer memory. Meets HTS 8542.32.0028 criteria as a dynamic random access memory in the 256-512 megabit capacity range. Provides temporary storage for print job processing and image buffering.
Industrial 512Mb DRAM Chip for PLC Systems
Ruggedized 512 megabit dynamic RAM IC designed for programmable logic controllers and industrial automation equipment, featuring wide temperature operation and error correction. Classified under HTS 8542.32.0028 for DRAM chips in the specified megabit capacity range. Essential for real-time industrial control data buffering.
Medical Device 512Mbit DRAM for Imaging Systems
512 megabit DRAM chip certified for medical imaging equipment like ultrasound and MRI buffer memory, featuring radiation tolerance and medical-grade reliability. Falls under HTS 8542.32.0028 as a dynamic memory IC within the 256-512 megabit capacity specification. Critical for real-time image processing in diagnostic equipment.
512Mb DRAM for Networking Routers
High-speed 512 megabit synchronous DRAM optimized for packet buffering in enterprise routers and switches. Classified under HTS 8542.32.0028 meeting DRAM capacity requirements of over 256 but not over 512 megabits. Supports high-throughput network data processing and routing table storage.
Gaming Console 512Mbit DRAM Chip
512 megabit DDR memory IC specifically engineered for handheld gaming consoles and portable gaming systems. Meets HTS 8542.32.0028 for DRAM chips with capacity exceeding 256 megabits but not over 512 megabits. Provides frame buffer and working memory for gaming applications.
512Mb DRAM for Digital Set-Top Boxes
512 megabit synchronous DRAM chip for digital television set-top boxes and media players, handling video decoding and channel buffering. Classified under HTS 8542.32.0028 as DRAM within the specified megabit capacity range. Supports HD video processing and EPG data storage.
Flight Recorder 512Mbit DRAM Chip
Ruggedized 512 megabit DRAM with radiation tolerance for avionics black box flight data recorders and cockpit display systems. Falls under HTS 8542.32.0028 for its DRAM technology and 256-512 megabit capacity. Meets DO-160 aviation environmental standards.
512Mb Buffer DRAM for SSD Controllers
512 megabit DRAM used as volatile cache buffer in solid state drive controllers for wear leveling and data mapping. Classified under HTS 8542.32.0028 meeting DRAM megabit capacity specifications. Enhances SSD random access performance.
512Mbit DRAM for Smart Meters
Low-power 512 megabit DRAM for utility smart electricity meters, storing billing data and load profiles. Meets HTS 8542.32.0028 for DRAM chips in 256-512 megabit capacity range. Designed for long-term meter deployment with minimal power consumption.
512Mb Graphics DRAM for FPGA Development
512 megabit high-speed DRAM interface chip for FPGA prototyping boards and graphics acceleration development kits. Classified under HTS 8542.32.0028 as DRAM memory IC within specified capacity. Used by engineers for custom graphics processing algorithm development.