Samsung K4B2G1646D-BCK0 8Gb DDR3L DRAM Chip
This is a 512 megabit (8Gb density) DDR3L low voltage dynamic random access memory integrated circuit designed for mobile and embedded applications. It falls under HTS 8542.32.0028 because it is a DRAM memory chip with capacity over 256 megabits but not exceeding 512 megabits per the tariff classification. These chips are commonly used in smartphones, tablets, and IoT devices for temporary data storage.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If capacity is 256 megabits or less
Lower capacity DRAM chips fall into the preceding memory size subheading based on total bit capacity
If not dynamic RAM (e.g., SRAM or other volatile memory)
Different types of random access memories excluding DRAM are classified separately within the memories heading
If supplied as part of a complete memory module or assembled on PCB
Assembled electronic modules containing ICs are classified as parts of electrical machines rather than individual integrated circuits
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Import Tips & Compliance
• Verify exact memory capacity via datasheet to confirm 8542.32.0028 classification; obtain supplier's certificate of conformance for silicon capacity specs
• Declare as individual ICs not mounted on boards to avoid misclassification as assemblies
• Comply with REACH/RoHS regulations with proper documentation
Related Products under HTS 8542.32.00.28
Micron MT41K256M16HA-125 DDR4 4Gb DRAM IC
A 512 megabit DDR4 synchronous dynamic random access memory chip optimized for high-performance computing applications like servers and graphics cards. Classified under HTS 8542.32.0028 due to its DRAM technology and capacity range exceeding 256 but not over 512 megabits. This IC provides high-speed data access for demanding memory-intensive workloads.
SK Hynix H5TQ4G63AFR-RDC 512Mx8 GDDR5 DRAM Chip
Graphics Double Data Rate 5 (GDDR5) DRAM integrated circuit with 512 megabit capacity per die, used in high-end graphics processing units and gaming consoles. This product qualifies for HTS 8542.32.0028 as a dynamic read-write random access memory within the specified megabit range. It supports ultra-high bandwidth requirements for real-time graphics rendering.
512Mb LPDDR2 Mobile DRAM S9KLHBG08K2CA
Low Power DDR2 synchronous DRAM chip designed for smartphones and portable devices, featuring 512 megabit capacity with power-saving architecture. Falls under HTS 8542.32.0028 as it meets the DRAM classification criteria for memory capacity between 256 and 512 megabits. Essential for mobile computing with optimized power consumption.
DDR3L 512Mbit Automotive Grade DRAM AS4C256M16D3L-60BCN
Automotive-qualified DDR3L DRAM chip with 512 megabit capacity, designed for extended temperature range (-40°C to 105°C) and high reliability in vehicle electronics. Classified under HTS 8542.32.0028 for its DRAM memory type and specified capacity range. Used in ADAS systems, infotainment, and engine control modules.
512 Megabit SDRAM Chip for Printers KM416S4030CT-G8
Single Data Rate Synchronous DRAM integrated circuit with 512 megabit capacity, optimized for laser printer and multifunction device buffer memory. Meets HTS 8542.32.0028 criteria as a dynamic random access memory in the 256-512 megabit capacity range. Provides temporary storage for print job processing and image buffering.
Industrial 512Mb DRAM Chip for PLC Systems
Ruggedized 512 megabit dynamic RAM IC designed for programmable logic controllers and industrial automation equipment, featuring wide temperature operation and error correction. Classified under HTS 8542.32.0028 for DRAM chips in the specified megabit capacity range. Essential for real-time industrial control data buffering.