CMOS Image Sensor

A Complementary Metal-Oxide-Semiconductor (CMOS) image sensor transducing light into digital electrical signals via photosites. Classified under HTS 8541.51.00.00 for semiconductor-based transducers in digital cameras and machine vision. Each pixel acts as an independent photodetector.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFree+50.0%50%
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡¨πŸ‡¦CanadaFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8525.89.40.00Lower: 17.5% vs 50%

If digital still image cameras complete units

Assembled camera systems with sensors fall under 8525 camera heading.

8542.31.00Same rate: 50%

If when primarily functioning as an IC processor

Image sensors with dominant signal processing classified as ICs under 8542.

9010.60.00.00Lower: 35% vs 50%

If apparatus for projection screens or instruments

Photosensitive semiconductor devices in optical apparatus shift to Chapter 90.

Not sure which classification is right?

Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.

Import Tips & Compliance

β€’ Provide pixel array architecture diagrams showing semiconductor photosensitive elements

β€’ Distinguish bare dies from packaged cameras; declare wafer-level processing history

β€’ ITAR/EAR checks required for high-resolution sensors potentially dual-use

Related Products under HTS 8541.51.00.00

MEMS Microphone

A Micro-Electro-Mechanical Systems (MEMS) microphone that converts sound waves into electrical signals using semiconductor technology. It falls under HTS 8541.51.00.00 as a semiconductor-based transducer designed for audio input in smartphones, laptops, and wearables. These devices integrate semiconductor fabrication processes for high sensitivity and miniaturization.

Semiconductor Pressure Sensor

A piezoresistive pressure sensor using silicon diaphragm to transduce pressure into electrical resistance changes. Classified under HTS 8541.51.00.00 for semiconductor-based transducers used in automotive, medical, and industrial applications. It relies on semiconductor doping for strain gauge functionality.

Photovoltaic Transducer Cell

A single semiconductor-based photovoltaic cell functioning as a light-to-electricity transducer, not assembled into panels. HTS 8541.51.00.00 covers such photosensitive semiconductor transducers used in sensors or small power applications. It converts photons directly via p-n junction without module packaging.

Silicon Accelerometer Sensor

A MEMS accelerometer using semiconductor capacitive plates to transduce acceleration into electrical signals. Falls under HTS 8541.51.00.00 as a semiconductor-based motion transducer for smartphones, drones, and automotive stability control. Fabricated via silicon etching for differential capacitance detection.

Hall Effect Sensor

A semiconductor Hall effect transducer converting magnetic fields into voltage via Hall voltage generation in silicon. HTS 8541.51.00.00 applies to these contactless position/magnetic field sensors used in motors, keyboards, and automotive. Utilizes semiconductor carrier mobility for transduction.

Semiconductor Temperature Sensor IC

A bandgap voltage reference temperature transducer using semiconductor pn-junction forward voltage variation. Under HTS 8541.51.00.00 for semiconductor-based thermal transducers in processors, HVAC, and medical devices. Transduces temperature directly to analog/digital output.