CMOS Image Sensor from China
A Complementary Metal-Oxide-Semiconductor (CMOS) image sensor transducing light into digital electrical signals via photosites. Classified under HTS 8541.51.00.00 for semiconductor-based transducers in digital cameras and machine vision. Each pixel acts as an independent photodetector.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Provide pixel array architecture diagrams showing semiconductor photosensitive elements
• Distinguish bare dies from packaged cameras; declare wafer-level processing history
• ITAR/EAR checks required for high-resolution sensors potentially dual-use