MEMS Microphone
A Micro-Electro-Mechanical Systems (MEMS) microphone that converts sound waves into electrical signals using semiconductor technology. It falls under HTS 8541.51.00.00 as a semiconductor-based transducer designed for audio input in smartphones, laptops, and wearables. These devices integrate semiconductor fabrication processes for high sensitivity and miniaturization.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | +50.0% | 50% |
| π²π½Mexico | Free | β | Free |
| π¨π¦Canada | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If when imported as part of a complete microphone assembly for telephones
Complete microphone units with transducers fall under heading 8518 for electrical apparatus, not separate semiconductor devices.
If classified primarily as an integrated circuit rather than a discrete transducer
Hybrid ICs with transducer functions are covered by 8542 processors, differing from discrete semiconductor transducers.
If for industrial measurement use, not general semiconductor devices
Transducers specifically for measuring or checking instruments shift to Chapter 90 optical/precision apparatus.
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Import Tips & Compliance
β’ Verify semiconductor fabrication origin via manufacturer specs to confirm classification as a transducer, not a complete microphone assembly
β’ Include detailed datasheets showing piezo-resistive or capacitive sensing elements in import documentation to avoid reclassification
β’ Watch for anti-dumping duties on Asian-sourced MEMS; ensure proper country-of-origin marking
Related Products under HTS 8541.51.00.00
Semiconductor Pressure Sensor
A piezoresistive pressure sensor using silicon diaphragm to transduce pressure into electrical resistance changes. Classified under HTS 8541.51.00.00 for semiconductor-based transducers used in automotive, medical, and industrial applications. It relies on semiconductor doping for strain gauge functionality.
Photovoltaic Transducer Cell
A single semiconductor-based photovoltaic cell functioning as a light-to-electricity transducer, not assembled into panels. HTS 8541.51.00.00 covers such photosensitive semiconductor transducers used in sensors or small power applications. It converts photons directly via p-n junction without module packaging.
Silicon Accelerometer Sensor
A MEMS accelerometer using semiconductor capacitive plates to transduce acceleration into electrical signals. Falls under HTS 8541.51.00.00 as a semiconductor-based motion transducer for smartphones, drones, and automotive stability control. Fabricated via silicon etching for differential capacitance detection.
CMOS Image Sensor
A Complementary Metal-Oxide-Semiconductor (CMOS) image sensor transducing light into digital electrical signals via photosites. Classified under HTS 8541.51.00.00 for semiconductor-based transducers in digital cameras and machine vision. Each pixel acts as an independent photodetector.
Hall Effect Sensor
A semiconductor Hall effect transducer converting magnetic fields into voltage via Hall voltage generation in silicon. HTS 8541.51.00.00 applies to these contactless position/magnetic field sensors used in motors, keyboards, and automotive. Utilizes semiconductor carrier mobility for transduction.
Semiconductor Temperature Sensor IC
A bandgap voltage reference temperature transducer using semiconductor pn-junction forward voltage variation. Under HTS 8541.51.00.00 for semiconductor-based thermal transducers in processors, HVAC, and medical devices. Transduces temperature directly to analog/digital output.