High-Temperature Diac Die
Unmounted diac dice rated for 175°C operation in automotive ignition systems. Falls under 8541.30.00.40 as semiconductor wafers for diac devices with high-temperature junction specs. Critical for engine timing circuits.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If electrical ignition/distribution equipment parts
Dice specifically for ignition systems classify under ignition equipment.
If complete automotive electrical control units
Assembled automotive ECUs containing dice become vehicle parts.
If memory device dice with diac protection
Integrated protection circuits shift to IC classification.
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Import Tips & Compliance
• Automotive qualification docs (AEC-Q101) essential; declare junction temperature specs; use automotive-grade anti-static packaging
Related Products under HTS 8541.30.00.40
Silicon Carbide Thyristor Wafer
Unmounted silicon carbide wafers designed for fabricating high-power thyristors used in industrial motor controls and power grids. These wafers meet the subheading criteria for thyristor chips under 8541.30.00.40 as they are unmounted semiconductor dice in wafer form prior to dicing. They enable high-voltage switching applications due to their superior thermal management.
Gallium Nitride Diac Wafer
Unmounted GaN wafers for diac production, used in high-frequency switching circuits and surge protection devices. Classified under 8541.30.00.40 as unmounted semiconductor wafers specifically for diac devices which are bidirectional trigger thyristors. Their wide bandgap properties enable efficient operation in power electronics.
1200V Silicon Triac Die
Unmounted silicon dice rated at 1200V for triac fabrication, essential for AC motor controls and lighting dimmers. These individual semiconductor chips qualify under 8541.30.00.40 as unmounted triac dice before packaging. Triacs provide bidirectional switching for household appliances.
High-Power Thyristor Wafer (4-inch)
4-inch unmounted silicon wafers for manufacturing high-power thyristors used in HVDC transmission systems. Specifically classified under 8541.30.00.40 due to thyristor-specific epitaxial layers and doping. These enable megawatt-scale power control applications.
SiC Triac Chip (Unmounted)
Individual unmounted silicon carbide chips for triac devices operating at 600V-1200V in EV power electronics. Falls under 8541.30.00.40 as unmounted triac semiconductor dice with bidirectional gate control structure. Superior to silicon in high-temperature performance.
Industrial Diac Wafer (6-inch)
6-inch silicon wafers engineered for diac production in industrial dimming and timing circuits. Classified specifically under 8541.30.00.40 for unmounted diac wafers with symmetrical breakover voltage characteristics. Supports precise AC phase control applications.