V-Band Low Noise Transistor

Low-noise transistor for V-band (40-75 GHz) point-to-point microwave links. Classified in HTS 8541.29.00.85 for transistor type and operating frequency >30,000 MHz. Critical for backhaul networks and wireless broadband.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
🇨🇳ChinaFree+50.0%50%
🇲🇽MexicoFreeFree
🇨🇦CanadaFreeFree
🇩🇪GermanyFreeFree
🇯🇵JapanFreeFree

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8517Lower: 10% vs 50%

If assembled into phone parts

Parts of telephones/other comm equipment classified in 8517.

8543.70Lower: 12.6% vs 50%

If for other electrical machines

Other electrical apparatus not specified elsewhere goes to 8543.

8542.39.00Same rate: 50%

If containing amplifier circuits

ICs with amplifier functions classified as analog circuits in 8542.

Not sure which classification is right?

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Import Tips & Compliance

Provide noise figure specifications and S-parameter data for classification

Ensure FCC compliance labeling for radio frequency devices

Batch import with consistent lot numbers for traceability

Related Products under HTS 8541.29.00.85

GaN High-Frequency Power Transistor

A gallium nitride (GaN) based transistor designed for operation at frequencies exceeding 30,000 MHz, used in radar systems and satellite communications. It falls under HTS 8541.29.00.85 due to its transistor function and high operating frequency specification in the subheading. These devices provide high power output and efficiency at millimeter-wave bands.

mmWave SiGe Transistor for 5G Base Stations

Silicon-germanium (SiGe) transistor optimized for 28-39 GHz bands in 5G infrastructure. Classified under HTS 8541.29.00.85 for its transistor construction and ultra-high frequency capability exceeding 30 GHz. Essential for high-speed data transmission in cellular networks.

Ka-Band HEMT Transistor

High Electron Mobility Transistor (HEMT) for Ka-band (26.5-40 GHz) satellite transponders. Meets HTS 8541.29.00.85 criteria as a discrete transistor with operating frequency over 30,000 MHz. Used in low-noise amplifiers for space communications.

Millimeter-Wave PA Transistor for Radar

Power amplifier transistor for automotive and military radar systems operating at 77 GHz. Falls under HTS 8541.29.00.85 due to its high-frequency transistor design exceeding 30 GHz threshold. Enables precise detection in ADAS and defense applications.

77 GHz Automotive Radar Transistor

Discrete transistor for 77 GHz millimeter-wave radar in adaptive cruise control systems. Meets HTS 8541.29.00.85 as a high-frequency (>30 GHz) transistor for automotive sensing. High reliability for safety-critical applications.

GaAs pHEMT RF Transistor

Pseudomorphic High Electron Mobility Transistor (pHEMT) on GaAs substrate for 35+ GHz operation. Classified HTS 8541.29.00.85 for high-frequency transistor characteristics. Used in wireless infrastructure and test equipment.