77 GHz Automotive Radar Transistor
Discrete transistor for 77 GHz millimeter-wave radar in adaptive cruise control systems. Meets HTS 8541.29.00.85 as a high-frequency (>30 GHz) transistor for automotive sensing. High reliability for safety-critical applications.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If other frequency ranges under 30GHz
General transistors under 30GHz use parent 8541.29 without .85 suffix.
If for radio navigational receivers
Radar receivers/components classified under 8526.
If measuring/displaying instruments
Devices for measuring with electronic displays go to Chapter 90.
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Import Tips & Compliance
• Include IATF 16949 certification for automotive quality standards
• Specify temperature range (-40°C to 125°C) suitable for under-hood use
• Avoid bulk packaging; use automotive-grade moisture barrier bags
Related Products under HTS 8541.29.00.85
GaN High-Frequency Power Transistor
A gallium nitride (GaN) based transistor designed for operation at frequencies exceeding 30,000 MHz, used in radar systems and satellite communications. It falls under HTS 8541.29.00.85 due to its transistor function and high operating frequency specification in the subheading. These devices provide high power output and efficiency at millimeter-wave bands.
mmWave SiGe Transistor for 5G Base Stations
Silicon-germanium (SiGe) transistor optimized for 28-39 GHz bands in 5G infrastructure. Classified under HTS 8541.29.00.85 for its transistor construction and ultra-high frequency capability exceeding 30 GHz. Essential for high-speed data transmission in cellular networks.
Ka-Band HEMT Transistor
High Electron Mobility Transistor (HEMT) for Ka-band (26.5-40 GHz) satellite transponders. Meets HTS 8541.29.00.85 criteria as a discrete transistor with operating frequency over 30,000 MHz. Used in low-noise amplifiers for space communications.
Millimeter-Wave PA Transistor for Radar
Power amplifier transistor for automotive and military radar systems operating at 77 GHz. Falls under HTS 8541.29.00.85 due to its high-frequency transistor design exceeding 30 GHz threshold. Enables precise detection in ADAS and defense applications.
V-Band Low Noise Transistor
Low-noise transistor for V-band (40-75 GHz) point-to-point microwave links. Classified in HTS 8541.29.00.85 for transistor type and operating frequency >30,000 MHz. Critical for backhaul networks and wireless broadband.
GaAs pHEMT RF Transistor
Pseudomorphic High Electron Mobility Transistor (pHEMT) on GaAs substrate for 35+ GHz operation. Classified HTS 8541.29.00.85 for high-frequency transistor characteristics. Used in wireless infrastructure and test equipment.