With an operating frequency 30,000 MHz or greater
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Transistors, other than photosensitive transistors: > Other > Other: > With an operating frequency 30,000 MHz or greater
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8541.29.00.85
GaN High-Frequency Power Transistor
A gallium nitride (GaN) based transistor designed for operation at frequencies exceeding 30,000 MHz, used in radar systems and satellite communications. It falls under HTS 8541.29.00.85 due to its transistor function and high operating frequency specification in the subheading. These devices provide high power output and efficiency at millimeter-wave bands.
mmWave SiGe Transistor for 5G Base Stations
Silicon-germanium (SiGe) transistor optimized for 28-39 GHz bands in 5G infrastructure. Classified under HTS 8541.29.00.85 for its transistor construction and ultra-high frequency capability exceeding 30 GHz. Essential for high-speed data transmission in cellular networks.
Ka-Band HEMT Transistor
High Electron Mobility Transistor (HEMT) for Ka-band (26.5-40 GHz) satellite transponders. Meets HTS 8541.29.00.85 criteria as a discrete transistor with operating frequency over 30,000 MHz. Used in low-noise amplifiers for space communications.
Millimeter-Wave PA Transistor for Radar
Power amplifier transistor for automotive and military radar systems operating at 77 GHz. Falls under HTS 8541.29.00.85 due to its high-frequency transistor design exceeding 30 GHz threshold. Enables precise detection in ADAS and defense applications.
V-Band Low Noise Transistor
Low-noise transistor for V-band (40-75 GHz) point-to-point microwave links. Classified in HTS 8541.29.00.85 for transistor type and operating frequency >30,000 MHz. Critical for backhaul networks and wireless broadband.
77 GHz Automotive Radar Transistor
Discrete transistor for 77 GHz millimeter-wave radar in adaptive cruise control systems. Meets HTS 8541.29.00.85 as a high-frequency (>30 GHz) transistor for automotive sensing. High reliability for safety-critical applications.
GaAs pHEMT RF Transistor
Pseudomorphic High Electron Mobility Transistor (pHEMT) on GaAs substrate for 35+ GHz operation. Classified HTS 8541.29.00.85 for high-frequency transistor characteristics. Used in wireless infrastructure and test equipment.
E-Band Transistor for Backhaul
Transistor for E-band (71-76/81-86 GHz) wireless backhaul links providing multi-Gbps capacity. HTS 8541.29.00.85 classification for >30 GHz operating frequency transistor. Enables carrier-grade point-to-point connectivity.