8541.29.00.40/Gallium Arsenide RF Transistor Die/Japan

Gallium Arsenide RF Transistor Die from Japan

Unmounted GaAs chips or dice designed for high-frequency RF transistors used in wireless communication base stations. Falls under HTS 8541.29.00.40 as unmounted transistor dice other than photosensitive. These high-electron-mobility transistor (HEMT) structures are pre-packaging for microwave applications.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Declare exact compound semiconductor material (GaAs) and wafer thickness to distinguish from silicon variants

• Obtain export licenses from origin country if dual-use technology; include end-user certificates

Gallium Arsenide RF Transistor Die from Japan — Import Duty Rate | HTS 8541.29.00.40