Gallium Arsenide RF Transistor Die from China
Unmounted GaAs chips or dice designed for high-frequency RF transistors used in wireless communication base stations. Falls under HTS 8541.29.00.40 as unmounted transistor dice other than photosensitive. These high-electron-mobility transistor (HEMT) structures are pre-packaging for microwave applications.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Declare exact compound semiconductor material (GaAs) and wafer thickness to distinguish from silicon variants
• Obtain export licenses from origin country if dual-use technology; include end-user certificates