IMPATT Microwave Diode from China
Impact Avalanche Transit Time (IMPATT) diode for high-power microwave amplifiers in weather radar and satellite uplinks. Under HTS 8541.10.00.60 for microwave-specific negative resistance characteristics up to 100 GHz. Delivers watts of RF power for long-range detection.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• High-power handling specs (>1W) and thermal data distinguish from low-power RF diodes
• Radiation tolerance certification for space-qualified versions
• Export control classification (ECCN) determination mandatory for high-power microwave devices