IMPATT Microwave Diode
Impact Avalanche Transit Time (IMPATT) diode for high-power microwave amplifiers in weather radar and satellite uplinks. Under HTS 8541.10.00.60 for microwave-specific negative resistance characteristics up to 100 GHz. Delivers watts of RF power for long-range detection.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If vacuum-implemented microwave tube equivalent
IMPATT-like performance in vacuum tubes classifies under microwave power devices.
If telecom transmitter module
IMPATT diodes pre-mounted in amplifier assemblies for transmission apparatus.
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Import Tips & Compliance
• High-power handling specs (>1W) and thermal data distinguish from low-power RF diodes
• Radiation tolerance certification for space-qualified versions
• Export control classification (ECCN) determination mandatory for high-power microwave devices
Related Products under HTS 8541.10.00.60
GaN Microwave Schottky Diode
A gallium nitride (GaN) Schottky diode designed for microwave frequencies above 1 GHz, used in radar systems and satellite communications. It falls under HTS 8541.10.00.60 as a non-photosensitive, non-LED diode specifically for microwave applications. These diodes provide low forward voltage drop and high switching speeds essential for high-frequency signal processing.
MMIC Microwave Mixer Diode
Monolithic Microwave Integrated Circuit (MMIC) diode used as a frequency mixer in 5G base stations and wireless infrastructure. Classified under HTS 8541.10.00.60 for its microwave diode functionality enabling signal up/down conversion at Ku-band frequencies. Essential for modern telecom due to compact size and high performance.
SiGe Microwave Varactor Diode
Silicon-Germanium varactor diode for Voltage Controlled Oscillators (VCOs) in microwave radar and point-to-point microwave links. HTS 8541.10.00.60 applies due to its microwave tuning range of 2-18 GHz and non-LED, non-photosensitive nature. Provides precise capacitance variation for frequency agility in defense electronics.
PIN Microwave Photodiode
High-speed PIN photodiode optimized for microwave mmWave frequencies in 5G fronthaul links and optical communication. Though photosensitive, classified under 8541.10.00.60 when used purely as microwave detector rather than imaging sensor. Handles 30+ GHz bandwidth for fiber-to-air signal conversion.
GaAs Microwave Gunn Diode
Gallium Arsenide Gunn diode oscillator for 24 GHz automotive radar and motion sensors. HTS 8541.10.00.60 covers this transferred electron effect microwave diode generating CW power up to 50 mW. Critical for ADAS blind spot detection and parking assist systems.
TRIMPATT Microwave Diode
Double-drift TRIMPATT diode combining IMPATT and TRAPATT modes for pulsed radar applications. HTS 8541.10.00.60 classification for X-band (8-12 GHz) high-peak power microwave operation. Used in military fire control and air traffic control radars.