Microwave
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Diodes, other than photosensitive or light-emitting diodes (LED) > Other: > Microwave
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8541.10.00.60
GaN Microwave Schottky Diode
A gallium nitride (GaN) Schottky diode designed for microwave frequencies above 1 GHz, used in radar systems and satellite communications. It falls under HTS 8541.10.00.60 as a non-photosensitive, non-LED diode specifically for microwave applications. These diodes provide low forward voltage drop and high switching speeds essential for high-frequency signal processing.
MMIC Microwave Mixer Diode
Monolithic Microwave Integrated Circuit (MMIC) diode used as a frequency mixer in 5G base stations and wireless infrastructure. Classified under HTS 8541.10.00.60 for its microwave diode functionality enabling signal up/down conversion at Ku-band frequencies. Essential for modern telecom due to compact size and high performance.
SiGe Microwave Varactor Diode
Silicon-Germanium varactor diode for Voltage Controlled Oscillators (VCOs) in microwave radar and point-to-point microwave links. HTS 8541.10.00.60 applies due to its microwave tuning range of 2-18 GHz and non-LED, non-photosensitive nature. Provides precise capacitance variation for frequency agility in defense electronics.
PIN Microwave Photodiode
High-speed PIN photodiode optimized for microwave mmWave frequencies in 5G fronthaul links and optical communication. Though photosensitive, classified under 8541.10.00.60 when used purely as microwave detector rather than imaging sensor. Handles 30+ GHz bandwidth for fiber-to-air signal conversion.
GaAs Microwave Gunn Diode
Gallium Arsenide Gunn diode oscillator for 24 GHz automotive radar and motion sensors. HTS 8541.10.00.60 covers this transferred electron effect microwave diode generating CW power up to 50 mW. Critical for ADAS blind spot detection and parking assist systems.
IMPATT Microwave Diode
Impact Avalanche Transit Time (IMPATT) diode for high-power microwave amplifiers in weather radar and satellite uplinks. Under HTS 8541.10.00.60 for microwave-specific negative resistance characteristics up to 100 GHz. Delivers watts of RF power for long-range detection.
TRIMPATT Microwave Diode
Double-drift TRIMPATT diode combining IMPATT and TRAPATT modes for pulsed radar applications. HTS 8541.10.00.60 classification for X-band (8-12 GHz) high-peak power microwave operation. Used in military fire control and air traffic control radars.
Microwave Tunnel Diode
Esaki tunnel diode for ultra-fast microwave detectors and oscillators in instrumentation. Falls under HTS 8541.10.00.60 due to quantum tunneling negative resistance at Ka-band frequencies. Legacy but still used in high-frequency lab equipment.
Beam Lead Microwave Diode
Gold beam lead Schottky diode chips for hybrid microwave circuits in phased array radars. HTS 8541.10.00.60 for unpackaged microwave diode die with >40 GHz cutoff frequency. Enables high-density MMIC assembly.
Microwave Limiters Diode
PIN diode limiter for receiver protection in EW (Electronic Warfare) systems. Classified HTS 8541.10.00.60 for microwave power handling up to 100W peak at C-band. Prevents front-end damage from high-power interference.