Gallium Arsenide PIN Diode Die from China
Individual unmounted GaAs PIN diode dice designed for RF switching, attenuation, and microwave applications in telecommunications. These dice feature precise p-i-n junction structures formed on gallium arsenide substrate. HTS 8541.10.0040 applies to such unmounted semiconductor dice for non-photosensitive, non-LED diodes.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Include material safety data sheets confirming non-radioactive GaAs composition to avoid hazmat classification issues
• Declare exact die dimensions and electrical specs; mismatches can lead to reclassification as integrated circuits
• Use anti-static and moisture-barrier packaging; improper handling often results in yield loss claims at import