Silicon Epitaxy Gas Injector from Japan
Precision jet injector projecting precursor gases onto heated wafers for epitaxial layer growth in semiconductor devices. HTS 8424.89.9000 includes gas dispersing jet projecting machines for semiconductor processing.
Duty Rate — Japan → United States
15%
Rate breakdown
9903.82.1015%Except as provided for in headings 9903.82.12, 9903.82.17 and 9903.85.68, derivative aluminum and steel articles with an ad valorem (or ad valorem equivalent) rate of duty under column 1 less than 15 percent, as provided for in subdivision (f) of U.S. note 16 to this subchapter
9903.05.900%Articles already subject to Section 232 (steel/aluminum/copper + derivatives, autos + parts, wood, medium/heavy vehicles + parts, semiconductors, patented pharma) — U.S. note 52(f)
Import Tips
• Provide gas flow uniformity and precursor compatibility documentation
• Classify showerhead separately from reactor chamber if modular