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Czochralski Crystal Puller Heating Chamber

This is the graphite or molybdenum heating chamber used in Czochralski crystal growers for pulling monocrystalline silicon boules in semiconductor manufacturing. It falls under HTS 8417.90.00.00 as a part of a nonelectric industrial furnace/oven designed for high-temperature crystal growth processes. The chamber maintains precise thermal gradients essential for defect-free crystal formation.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
🇨🇳China3.9%+35.0%38.9%
🇲🇽Mexico3.9%+10.0%13.9%
🇨🇦Canada3.9%+10.0%13.9%
🇩🇪Germany3.9%+10.0%13.9%
🇯🇵Japan3.9%+10.0%13.9%

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8486.90.00.00Lower: 25% vs 38.9%

If

6815.99Lower: 10% vs 38.9%

If

9032.89.60Lower: 36.7% vs 38.9%

If

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Import Tips & Compliance

Verify material certifications (graphite/molybdenum purity) meet semiconductor cleanroom standards; declare as furnace parts not complete machines to avoid Chapter 84 heading 8417.10; ensure thermal shock resistance documentation for customs valuation

Related Products under HTS 8417.90.00.00

Crystal Grinder Post-Process Cooling Zone

Controlled cooling section of nonelectric furnaces following crystal boule grinding, preventing thermal shock in semiconductor material preparation. Under HTS 8417.90.00.00 as industrial furnace parts. Maintains precise cooling rates for crystal integrity.

Float Zone Crystal Furnace Crucible Support

Ceramic or quartz support assembly for crucibles in float zone semiconductor crystal growth furnaces, operating nonelectrically via RF induction heating. Classified under HTS 8417.90.00.00 as parts of nonelectric industrial furnaces used in semiconductor material processing. Provides precise positioning during zone melting for ultra-pure silicon production.

Wafer Annealing Furnace Muffle

High-temperature resistant muffle (inner chamber) for rapid thermal annealing furnaces used in semiconductor wafer processing to activate dopants and repair crystal damage. Falls under HTS 8417.90.00.00 as parts of nonelectric industrial ovens for semiconductor device fabrication. Constructed from materials tolerating 1200°C+ processing temperatures.

Diffusion Furnace Quartz Tube Liner

High-purity fused quartz liner inserted into diffusion furnace tubes for dopant diffusion into semiconductor wafers during device fabrication. Classified under HTS 8417.90.00.00 as parts of nonelectric industrial furnaces critical to semiconductor processing. Prevents contamination during high-temperature (900-1200°C) diffusion processes.

Crystal Boule Grinder Furnace Heat Shield

Refractory heat shield for maintaining thermal stability in furnaces used during crystal boule grinding preparation for semiconductor wafer production. Under HTS 8417.90.00.00 as parts of nonelectric industrial furnaces in semiconductor manufacturing workflow. Protects grinding zone from thermal fluctuations.

Wafer Lapping Furnace Process Chamber

Thermal process chamber for post-lapping heat treatment furnaces that stabilize semiconductor wafers before polishing. Classified HTS 8417.90.00.00 as nonelectric industrial furnace parts in wafer preparation equipment. Ensures uniform wafer stress relief after mechanical lapping.