Boron-Doped Silicon Wafers from Japan
Silicon wafers doped with boron to create p-type semiconductors, typically 300mm in diameter for semiconductor fabrication. These are chemical elements (silicon) intentionally doped for electronic applications in integrated circuit production. Classified under HTS 3818.00.00 due to their disc/wafer form and doping for electronics.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Verify doping concentration and wafer specifications match import declaration to avoid reclassification
• Obtain Material Safety Data Sheets (MSDS) and ensure compliance with semiconductor import regulations