Boron-Doped Silicon Wafers from China
Silicon wafers doped with boron to create p-type semiconductors, typically 300mm in diameter for semiconductor fabrication. These are chemical elements (silicon) intentionally doped for electronic applications in integrated circuit production. Classified under HTS 3818.00.00 due to their disc/wafer form and doping for electronics.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Verify doping concentration and wafer specifications match import declaration to avoid reclassification
• Obtain Material Safety Data Sheets (MSDS) and ensure compliance with semiconductor import regulations