3818.00.00.95/Nitrogen-Doped Silicon Carbide Wafers/Japan

Nitrogen-Doped Silicon Carbide Wafers from Japan

SiC wafers doped with nitrogen for high-power, high-temperature electronics like EV inverters and power supplies. Offers wide bandgap properties for efficient power conversion. HTS 3818.00.00.95 covers these doped compound wafers.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Crystal orientation (4H/6H) and micropipe density certification mandatory for valuation

• Handle as brittle material; thermal shock resistance data aids claims

Nitrogen-Doped Silicon Carbide Wafers from Japan — Import Duty Rate | HTS 3818.00.00.95