Nitrogen-Doped Silicon Carbide Wafers from China
SiC wafers doped with nitrogen for high-power, high-temperature electronics like EV inverters and power supplies. Offers wide bandgap properties for efficient power conversion. HTS 3818.00.00.95 covers these doped compound wafers.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Crystal orientation (4H/6H) and micropipe density certification mandatory for valuation
• Handle as brittle material; thermal shock resistance data aids claims