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Nitrogen-Doped Silicon Carbide Wafers from Canada

SiC wafers doped with nitrogen for high-power, high-temperature electronics like EV inverters and power supplies. Offers wide bandgap properties for efficient power conversion. HTS 3818.00.00.95 covers these doped compound wafers.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))

Import Tips

Crystal orientation (4H/6H) and micropipe density certification mandatory for valuation

Handle as brittle material; thermal shock resistance data aids claims