Boron-Doped Silicon Wafers from Japan
Thin discs of silicon intentionally doped with boron to create p-type semiconductors for use in electronics manufacturing. These wafers serve as the foundational substrate for integrated circuits, transistors, and solar cells. Classified under HTS 3818.00.00.95 as chemical compounds doped for electronics in wafer form.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Verify doping concentration and uniformity certification to meet electronics industry standards and avoid reclassification
• Provide material safety data sheets (MSDS) and purity analysis reports; ensure cleanroom packaging to prevent contamination claims