Of boron

Carbides, whether or not chemically defined: > Other: > Of boron

Duty Rate (from China)

38.7%
MFN Base Rate3.7%

Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter

Except as provided in headings 9903.88.13, 9903.88.18, 9903.88.33, 9903.88.34, 9903.88.35, 9903.88.36, 9903.88.37, 9903.88.38, 9903.88.40, 9903.88.41, 9903.88.43, 9903.88.45, 9903.88.46, 9903.88.48, 9903.88.56, 9903.88.64, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(e) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(f)

Total Effective Rate38.7%

Products classified under HTS 2849.90.10.00

Boron Carbide Powder B4C 99% Purity

High-purity boron carbide (B4C) powder used primarily as an abrasive in polishing and grinding applications. This chemically defined inorganic compound of boron falls under HTS 2849.90.10.00 as a carbide of boron, not further processed into finished articles.

Amorphous Boron Carbide Granules 10-50 Micron

Granular amorphous boron carbide (B4C) used in metallurgical additives and ceramic raw materials. Classified under HTS 2849.90.10.00 as chemically defined boron carbide in granular form, excluding finished products.

High-Purity Boron Carbide for Nuclear Applications

Ultra-high purity boron carbide specifically for neutron absorption in nuclear reactors. Falls under HTS 2849.90.10.00 as chemically defined boron carbide compound, distinguished by isotopic purity.

Boron Carbide Abrasive Micro-Powder F220

F220 grit boron carbide micro-powder standardized for precision lapping and polishing of semiconductors and optics. Classified as chemically defined boron carbide under HTS 2849.90.10.00 before final abrasive article assembly.

Reaction-Bonded Boron Carbide Precursor Powder

Specialty boron carbide powder designed for reaction-bonded ceramic processing in armor and wear-resistant applications. Remains under HTS 2849.90.10.00 as pure chemical compound prior to sintering.

Boron Carbide Sputtering Target Material

High-density boron carbide material prepared for thin-film deposition via sputtering in semiconductor manufacturing. Classified under HTS 2849.90.10.00 as chemically defined boron carbide in raw target form.

Ultra-Fine Boron Carbide Nanopowder <500nm

Nanoscale boron carbide powder with average particle size <500nm for advanced composites and coatings. Meets HTS 2849.90.10.00 criteria as chemically defined boron carbide nanomaterial.