Space-Grade Triple Junction PV Cell
A gallium arsenide-based triple junction photovoltaic cell designed for satellite power systems with high radiation tolerance. This individual cell, not assembled into space panels, falls under tariff item 8541.42.00. Efficiencies exceed 30% under AM0 spectrum conditions.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the cells are assembled into space panels
Assembled space panels are classified as modules, not individual cells.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Provide certification of radiation tolerance and AM0 efficiency data
• Ensure the cells are not mounted on substrates or interconnected
• Check if export permits are required for space-grade technology
Related Products under Tariff item 8541.42.00
Amorphous Silicon Thin-Film PV Cell
A flexible amorphous silicon thin-film photovoltaic cell designed for building-integrated photovoltaics and portable applications. As a discrete cell not assembled into modules or panels, it qualifies under tariff item 8541.42.00. Lower efficiency (6-12%) is offset by flexibility and low-light performance.
Back Contact IBC PV Cell
An Interdigitated Back Contact (IBC) monocrystalline photovoltaic cell with all electrical contacts on the rear surface, maximizing front-side light absorption. This unassembled cell is classified under tariff item 8541.42.00 as a photosensitive semiconductor device. SunPower-style design achieves efficiencies above 25%.
Bifacial N-Type Silicon PV Cell
An N-type monocrystalline photovoltaic cell capable of generating power from both front and rear surfaces, increasing energy yield. This individual photosensitive semiconductor is not assembled into modules or panels, falling under tariff item 8541.42.00. Bifacial design enhances performance in reflective environments.
CIGS Copper Indium Gallium Selenide PV Cell
A copper indium gallium selenide (CIGS) thin-film photovoltaic cell known for high efficiency and good performance in low-light conditions. This unassembled cell is a photosensitive semiconductor device under tariff item 8541.42.00. CIGS technology offers flexibility and lightweight properties for various applications.
Half-Cut Monocrystalline PV Cell
A precision laser-cut half-size monocrystalline photovoltaic cell that reduces resistive losses when later assembled into modules. This cell remains under tariff item 8541.42.00 as it is not yet assembled into modules or panels. Half-cut design improves module efficiency and durability.
Heterojunction Silicon PV Cell (HJT)
A heterojunction (HJT) photovoltaic cell combining crystalline silicon with thin amorphous silicon layers for superior surface passivation. This individual cell, not assembled, falls under tariff item 8541.42.00. HJT technology achieves efficiencies over 26% with excellent temperature coefficients.