Photovoltaic cells not assembled in modules or made up into panels
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals. > Photovoltaic cells not assembled in modules or made up into panels > Photovoltaic cells not assembled in modules or made up into panels > Photovoltaic cells not assembled in modules or made up into panels
Duty Rate (from China)
Products classified under Tariff item 8541.42.00.00
Amorphous Silicon Thin-Film PV Cell
A flexible amorphous silicon thin-film photovoltaic cell designed for building-integrated photovoltaics and portable applications. As a discrete cell not assembled into modules or panels, it qualifies under tariff item 8541.42.00. Lower efficiency (6-12%) is offset by flexibility and low-light performance.
8541.42.00Back Contact IBC PV Cell
An Interdigitated Back Contact (IBC) monocrystalline photovoltaic cell with all electrical contacts on the rear surface, maximizing front-side light absorption. This unassembled cell is classified under tariff item 8541.42.00 as a photosensitive semiconductor device. SunPower-style design achieves efficiencies above 25%.
8541.42.00Bifacial N-Type Silicon PV Cell
An N-type monocrystalline photovoltaic cell capable of generating power from both front and rear surfaces, increasing energy yield. This individual photosensitive semiconductor is not assembled into modules or panels, falling under tariff item 8541.42.00. Bifacial design enhances performance in reflective environments.
8541.42.00CIGS Copper Indium Gallium Selenide PV Cell
A copper indium gallium selenide (CIGS) thin-film photovoltaic cell known for high efficiency and good performance in low-light conditions. This unassembled cell is a photosensitive semiconductor device under tariff item 8541.42.00. CIGS technology offers flexibility and lightweight properties for various applications.
8541.42.00Half-Cut Monocrystalline PV Cell
A precision laser-cut half-size monocrystalline photovoltaic cell that reduces resistive losses when later assembled into modules. This cell remains under tariff item 8541.42.00 as it is not yet assembled into modules or panels. Half-cut design improves module efficiency and durability.
8541.42.00Heterojunction Silicon PV Cell (HJT)
A heterojunction (HJT) photovoltaic cell combining crystalline silicon with thin amorphous silicon layers for superior surface passivation. This individual cell, not assembled, falls under tariff item 8541.42.00. HJT technology achieves efficiencies over 26% with excellent temperature coefficients.
8541.42.00Industrial Grade Silicon PV Cell Wafer
An industrial-grade silicon photovoltaic cell on a wafer, ready for tabbing and module assembly, but not yet assembled. Tariff item 8541.42.00 covers this photosensitive semiconductor device. Available in standard M2 or G1 sizes for commercial production.
8541.42.00Monocrystalline Silicon Photovoltaic Cell
A single monocrystalline silicon photovoltaic cell designed to convert sunlight directly into electricity through the photovoltaic effect. This cell is not assembled into modules or panels, classifying it under tariff item 8541.42.00. It is a fundamental building block for solar panels.
8541.42.00PERC Monocrystalline Solar Cell
A Passivated Emitter and Rear Cell (PERC) monocrystalline photovoltaic cell with enhanced rear passivation for higher efficiency. This individual cell, not assembled in modules, fits tariff item 8541.42.00 as a photosensitive semiconductor device. PERC technology is widely used in modern solar panels.
8541.42.00Polycrystalline Silicon Solar Cell
An individual polycrystalline silicon photovoltaic cell used in solar energy generation, featuring multiple crystal structures for cost-effective production. It falls under tariff item 8541.42.00 because it is a discrete photosensitive semiconductor device not assembled into modules or panels.
8541.42.00Quantum Dot Enhanced PV Cell
A photovoltaic cell enhanced with quantum dot technology for improved light absorption across the solar spectrum. This discrete photosensitive semiconductor device is not assembled into panels, falling under tariff item 8541.42.00. Quantum dot enhancement targets multi-junction efficiency improvements.
8541.42.00Space-Grade Triple Junction PV Cell
A gallium arsenide-based triple junction photovoltaic cell designed for satellite power systems with high radiation tolerance. This individual cell, not assembled into space panels, falls under tariff item 8541.42.00. Efficiencies exceed 30% under AM0 spectrum conditions.
8541.42.00Tandem Perovskite-Silicon PV Cell
An emerging tandem photovoltaic cell stacking a perovskite top cell on a silicon bottom cell for potential efficiencies above 30%. This individual research-grade cell is not assembled into commercial modules, falling under tariff item 8541.42.00. It represents cutting-edge solar technology.
8541.42.00Thin-Film Cadmium Telluride PV Cell
A thin-film photovoltaic cell made from cadmium telluride (CdTe) material, offering flexibility and lower production costs for large-scale applications. This standalone photosensitive semiconductor device is classified under tariff item 8541.42.00 as it is not assembled into modules or panels.
8541.42.00TOPCon Tunnel Oxide Passivated Contact PV Cell
An advanced TOPCon (Tunnel Oxide Passivated Contact) monocrystalline cell with ultra-low recombination losses for efficiencies exceeding 25%. This standalone cell fits tariff item 8541.42.00 as a photosensitive semiconductor device. TOPCon technology is a leading next-generation solar cell design.