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Industrial or laboratory furnaces and ovens, including incinerators, non-electric. > Other > Other
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Subheadings
Products classified under Tariff item 8417.80
Crystal Boule Grinder Furnace Enclosure
A specialized non-electric furnace enclosure designed to maintain thermal stability during the grinding of semiconductor crystal boules to precise diameters. It controls dust and ensures consistent temperature conditions critical for wafer preparation. Classified under tariff item 8417.80.00 as an industrial furnace of a kind used in semiconductor manufacturing.
8417.80.00Crystal Ingot Anneal Furnace
An industrial non-electric furnace used to anneal semiconductor crystal ingots after growth. It minimizes dislocation density and stabilizes resistivity profiles through slow, controlled ramp rates over extended periods in a vertical configuration.
8417.80.00Czochralski Crystal Puller Furnace
A non-electric industrial furnace that uses the Czochralski method to grow monocrystalline silicon boules from molten semiconductor material. It maintains precise temperature gradients in a vacuum to produce crystals for subsequent wafer slicing.
8417.80.00Float Zone Crystal Growth Furnace
A non-electric furnace that uses the float zone method to purify and grow monocrystalline semiconductor rods, particularly silicon, by melting a narrow zone with RF heating in a vacuum chamber. It is critical for producing ultra-high-purity crystals.
8417.80.00Hydrogen Bake Furnace
A non-electric furnace for high-temperature hydrogen baking of semiconductor wafers to remove native oxides and hydrogen-passivate surface defects before epitaxial growth. It uses forming gas mixtures in a controlled environment.
8417.80.00Rapid Thermal Processing RTP Furnace
A non-electric semiconductor furnace using lamp arrays for ultra-fast wafer heating to 1200°C in seconds for annealing and silicide formation. It is critical for submicron semiconductor device fabrication to prevent dopant redistribution.
8417.80.00Semiconductor Diffusion Furnace
A non-electric industrial furnace for dopant diffusion into semiconductor wafers to create device junctions, using gas phase reactions in horizontal or vertical quartz tubes. It is essential for bipolar and MOS device fabrication.
8417.80.00Silicon Carbide Sublimation Furnace
A non-electric high-temperature furnace using physical vapor transport (PVT) to grow silicon carbide boules for power electronics substrates. It operates above 2000°C in a vacuum with graphite components.
8417.80.00Wafer Annealing Furnace
An industrial non-electric furnace for high-temperature annealing of semiconductor wafers to relieve stresses and activate dopants after ion implantation. It uses rapid thermal processing in controlled atmospheres without electric heating.
8417.80.00Wafer Oxidation Furnace
A non-electric horizontal furnace growing thermal oxide layers on semiconductor wafers via steam or dry oxygen ambient at 900-1200°C. It is fundamental for MOS gate dielectrics and isolation structures.