Titanium Silicide Sputtering Target Material
Titanium silicide sputtering target material is high-purity TiSi2 powder pressed for thin-film deposition in semiconductor manufacturing. It remains classified as titanium silicide under tariff item 2850.00.00 as the chemical compound form. The product is used for silicide gate formation.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the target contains carbide binders
Compounds that are also carbides are excluded from heading 28.50.
If the target is doped for semiconductor use
Doped chemical elements for electronics may fall under heading 38.18.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Classify the product as titanium silicide in powder form, even if pressed
• Provide a description of the pressing process and purity
• The CBSA may require a certificate of analysis to confirm the chemical composition
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