Power Semiconductor Wafer Mapper from Germany
High-voltage probe system mapping electrical characteristics of power device wafers (MOSFET, IGBT) for automotive and energy applications. Tests breakdown voltage distribution. Under HTS 9030.82.00.00 for semiconductor wafers/devices.
Duty Rate — Germany → United States
10%
Rate breakdown
9903.03.0110%Except for products described in headings 9903.03.02–9903.03.11, articles the product of any country, as provided for in subdivision (aa) of U.S. note 2 to this subchapter
Import Tips
• Declare high-voltage safety ratings and insulation specifications
• Include power device structure compatibility documentation
• Specify wafer size for power device formats (200mm primarily)