Power Semiconductor Wafer Mapper from Germany
High-voltage probe system mapping electrical characteristics of power device wafers (MOSFET, IGBT) for automotive and energy applications. Tests breakdown voltage distribution. Under HTS 9030.82.00.00 for semiconductor wafers/devices.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Declare high-voltage safety ratings and insulation specifications
• Include power device structure compatibility documentation
• Specify wafer size for power device formats (200mm primarily)