Power Semiconductor Wafer Mapper from China
High-voltage probe system mapping electrical characteristics of power device wafers (MOSFET, IGBT) for automotive and energy applications. Tests breakdown voltage distribution. Under HTS 9030.82.00.00 for semiconductor wafers/devices.
Duty Rate — China → United States
25%
Rate breakdown
9903.88.0125%Except as provided in headings 9903.88.05, 9903.88.06, 9903.88.07, 9903.88.08, 9903.88.10, 9903.88.11, 9903.88.14, 9903.88.19, 9903.88.50, 9903.88.52, 9903.88.58, 9903.88.60, 9903.88.62, 9903.88.66, 9903.88.67, 9903.88.68, or 9903.88.69, articles the product of China, as provided for in U.S. note 20(a) to this subchapter and as provided for in the subheadings enumerated in U.S. note 20(b) [to this subchapter]
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Declare high-voltage safety ratings and insulation specifications
• Include power device structure compatibility documentation
• Specify wafer size for power device formats (200mm primarily)