Winbond W9864G6KH-6 SRAM Chip
Winbond W9864G6KH-6 is a 64Mb Mobile SRAM with 6ns access time optimized for smartphone applications. Falls under HTS 8542.32.0041 as high-density static read-write RAM IC. Features power-down current under 40uA for mobile power efficiency.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | +50.0% | 50% |
| π²π½Mexico | Free | β | Free |
| π¨π¦Canada | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If integrated into complete smartphone
Finished consumer electronics classified by function, not component parts.
If automotive-qualified with AEC-Q100
Automotive grade components use specific reliability statistical suffixes.
Not sure which classification is right?
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Import Tips & Compliance
β’ Certify for mobile device supply chains with REACH and Conflict Minerals reporting
β’ Declare FBGA package dimensions for proper handling classification
β’ Provide power consumption specs to distinguish from higher-power industrial SRAM
Related Products under HTS 8542.32.00.41
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This 4Mb asynchronous SRAM chip from Cypress Semiconductor operates at 10ns access time with a 3.3V supply voltage, featuring a 512K x 8 configuration. It is classified under HTS 8542.32.0041 as a static read-write random access memory integrated circuit, providing fast, non-volatile data storage without refresh cycles. Commonly used in embedded systems for buffering and caching.
Microchip Technology 23LC1024-I/SN SRAM Chip
Microchip's 23LC1024 is a 1Mb SPI serial SRAM with unlimited write/erase cycles and low power operation at 2.5-5.5V. As a static read-write RAM IC, it fits HTS 8542.32.0041 for high-speed data storage in portable devices. Ideal for battery-powered applications requiring persistent memory.
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Renesas 71V416S15ETG is a 4Mb synchronous burst SRAM with 15ns access time, pipelined architecture for high-performance caching. Classified as static read-write RAM under HTS 8542.32.0041 due to its non-refresh volatile memory design. Used in networking equipment and high-speed processors.
STMicroelectronics M48T58Y-70MH1 SRAM Chip
ST's M48T58Y is a 64Kb TIMEKEEPER SRAM with integrated RTC and automatic battery backup for non-volatile operation. Though functionally non-volatile, classified under HTS 8542.32.0041 as static read-write RAM IC. Essential for embedded systems requiring time-stamped data retention.
Alliance Memory AS7C3256-15PIN SRAM Chip
Alliance Memory's AS7C3256 is a low-power 256K x 16 bit asynchronous SRAM with 15ns access time in 48-pin TSOP package. Meets HTS 8542.32.0041 criteria as commercial temp static read-write memory IC. Replacement part for legacy telecom and industrial equipment.
GigaDevice GD25Q16C SPI SRAM Replacement Flash
While primarily NOR flash, certain GigaDevice serial memories function as SRAM replacements in legacy systems. Classified under HTS 8542.32.0041 when verified as static RAM behavior without block erase requirements. Used in cost-sensitive embedded applications.