GigaDevice GD25Q16C SPI SRAM Replacement Flash
While primarily NOR flash, certain GigaDevice serial memories function as SRAM replacements in legacy systems. Classified under HTS 8542.32.0041 when verified as static RAM behavior without block erase requirements. Used in cost-sensitive embedded applications.
Import Duty Rates by Country of Origin
| Origin Country | MFN Rate | Ch.99 Surcharges | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | +50.0% | 50% |
| π²π½Mexico | Free | β | Free |
| π¨π¦Canada | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If confirmed as non-volatile flash memory
Flash memory with block erase differs fundamentally from volatile SRAM operation.
If solid-state storage card assembly
Complete flash cards with controllers classified as storage devices, not ICs.
Not sure which classification is right?
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Import Tips & Compliance
β’ Submit timing diagrams proving SRAM-compatible read/write without flash erase cycles
β’ Avoid declaring as 'flash memory' to prevent reclassification to 8542.32.0080
β’ Test samples pre-shipment to confirm electrical compatibility with SRAM specs
Related Products under HTS 8542.32.00.41
Cypress CY7C1041DV33-10ZSXI SRAM Chip
This 4Mb asynchronous SRAM chip from Cypress Semiconductor operates at 10ns access time with a 3.3V supply voltage, featuring a 512K x 8 configuration. It is classified under HTS 8542.32.0041 as a static read-write random access memory integrated circuit, providing fast, non-volatile data storage without refresh cycles. Commonly used in embedded systems for buffering and caching.
Microchip Technology 23LC1024-I/SN SRAM Chip
Microchip's 23LC1024 is a 1Mb SPI serial SRAM with unlimited write/erase cycles and low power operation at 2.5-5.5V. As a static read-write RAM IC, it fits HTS 8542.32.0041 for high-speed data storage in portable devices. Ideal for battery-powered applications requiring persistent memory.
IDT (Renesas) 71V416S15ETG SRAM Chip
Renesas 71V416S15ETG is a 4Mb synchronous burst SRAM with 15ns access time, pipelined architecture for high-performance caching. Classified as static read-write RAM under HTS 8542.32.0041 due to its non-refresh volatile memory design. Used in networking equipment and high-speed processors.
STMicroelectronics M48T58Y-70MH1 SRAM Chip
ST's M48T58Y is a 64Kb TIMEKEEPER SRAM with integrated RTC and automatic battery backup for non-volatile operation. Though functionally non-volatile, classified under HTS 8542.32.0041 as static read-write RAM IC. Essential for embedded systems requiring time-stamped data retention.
Alliance Memory AS7C3256-15PIN SRAM Chip
Alliance Memory's AS7C3256 is a low-power 256K x 16 bit asynchronous SRAM with 15ns access time in 48-pin TSOP package. Meets HTS 8542.32.0041 criteria as commercial temp static read-write memory IC. Replacement part for legacy telecom and industrial equipment.
ISSI IS61LV25616-10K SRAM Chip
ISSI's IS61LV25616 provides 4Mb (256Kx16) low voltage 3.3V SRAM with 10ns access for high-performance applications. HTS 8542.32.0041 classification for static read-write monolithic ICs. Standard in graphics accelerators and telecom switches.