Over 1 gigabit
Electronic integrated circuits; parts thereof: > Electronic integrated circuits: > Memories > Dynamic read-write random access (DRAM): > Over 1 gigabit
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8542.32.00.36
Samsung K4B2G1646G-BCK0 16Gb DDR4 DRAM Chip
This is a 16 gigabit DDR4 synchronous dynamic random access memory (DRAM) integrated circuit chip used in computers and servers for high-speed data storage and retrieval. It falls under HTS 8542.32.0036 because it is a dynamic read-write random access memory (DRAM) with capacity exceeding 1 gigabit. The chip features advanced process technology for low power consumption and high performance.
Micron MT40A2G8SA-062E:A 16Gb LPDDR4 DRAM IC
A low-power DDR4 DRAM chip designed for mobile devices and automotive applications, offering 16 gigabits of dynamic random access memory. Classified under HTS 8542.32.0036 as it exceeds 1 gigabit capacity and is a dynamic read-write memory type. It supports high bandwidth for efficient multitasking in smartphones and tablets.
SK Hynix H9TP25A8JDMCUR 8GB LPDDR4x DRAM Chip
This 8GB (64Gb equivalent) LPDDR4x DRAM integrated circuit is optimized for ultra-low power consumption in wearables and IoT devices. It qualifies for HTS 8542.32.0036 due to its DRAM type and capacity well over 1 gigabit. The chip enables fast data access for edge computing applications.
Kingston KVR26S19D8/8 8GB DDR4-2666 DRAM IC Package
A single 8GB DDR4 DRAM chip package rated at 2666 MT/s for desktop and laptop memory upgrades. Falls under HTS 8542.32.0036 as a high-capacity dynamic random access memory exceeding 1 gigabit. Provides reliable performance for gaming and content creation workloads.
Crucial CT16G4SFD832A 16GB DDR4-3200 SODIMM DRAM Chip
High-performance 16GB DDR4 SODIMM DRAM IC for laptop memory expansion, operating at 3200 MT/s speeds. Classified in HTS 8542.32.0036 for its DRAM architecture and capacity far exceeding 1 gigabit threshold. Ideal for professional workstations and creative applications.
Samsung K3LK4G2BBBC-D39L 32Gb GDDR6 Graphics DRAM
A 32 gigabit GDDR6 DRAM chip engineered for high-end graphics cards and gaming consoles, delivering ultra-high bandwidth. Meets HTS 8542.32.0036 criteria as dynamic read-write memory over 1 gigabit capacity. Supports 4K gaming and AI rendering workloads.
Micron MTA36ASF4G72PZ-2G3 32GB DDR4 RDIMM DRAM IC
Server-grade 32GB DDR4 Registered DIMM DRAM chip with error correction for enterprise data centers. HTS 8542.32.0036 applies due to its massive capacity exceeding 1 gigabit in dynamic RAM format. Ensures reliability for cloud computing and virtualization.
Hynix HMA82GR7CJR8N-XN 32GB DDR4-3200 ECC UDIMM DRAM
32GB DDR4-3200 ECC Unbuffered DIMM DRAM chip for workstations requiring data integrity. Classified under HTS 8542.32.0036 for high-capacity DRAM functionality beyond 1 gigabit. Features on-die ECC for mission-critical applications.
Samsung M391A2K43BB1-CWE 16GB DDR4-2400 Registered DRAM
16GB DDR4-2400 registered DRAM IC for hyperscale cloud servers and HPC clusters. HTS 8542.32.0036 designation reflects its DRAM type and capacity over 1 gigabit. Optimized for 24/7 operation in massive parallel processing.
Kingston KSM32ED8/32ME 256GB DDR4 Enterprise DRAM Chip
Ultra-high density 256GB DDR4 enterprise DRAM IC for next-generation servers and AI supercomputers. Easily qualifies for HTS 8542.32.0036 with extreme capacity exceeding 1 gigabit by orders of magnitude. Features 3DS stacking technology for maximum bandwidth density.