8542.32.00.32/Samsung K4B2G1646G DRAM Chip/Canada

Samsung K4B2G1646G DRAM Chip from Canada

This is a 1Gb DDR3 SDRAM integrated circuit with 512Mx4 organization, designed for high-speed memory applications in computers and consumer electronics. It falls under HTS 8542.32.00.32 because it is a dynamic read-write random access memory (DRAM) chip with capacity over 512 megabits but not exceeding 1 gigabit. These chips are essential for temporary data storage in devices requiring fast read/write operations.

Duty Rate — Canada → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Verify exact memory density via datasheet to confirm HTS 8542.32.00.32 classification; slight variations may shift to adjacent subheadings

• Include RoHS compliance certificates and full technical specifications in documentation to avoid customs reclassification

• Package in anti-static materials and declare value based on silicon wafer content to prevent undervaluation penalties