Samsung K4B2G1646G DRAM Chip
This is a 1Gb DDR3 SDRAM integrated circuit with 512Mx4 organization, designed for high-speed memory applications in computers and consumer electronics. It falls under HTS 8542.32.00.32 because it is a dynamic read-write random access memory (DRAM) chip with capacity over 512 megabits but not exceeding 1 gigabit. These chips are essential for temporary data storage in devices requiring fast read/write operations.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If capacity is 512 megabits or less
DRAM chips with smaller memory density fall into the prior memory capacity subheading.
If not dynamic read-write random access type
Other types of electronic memories, like SRAM or non-volatile flash, are classified separately.
If imported as part of a populated memory module or SSD
Assembled modules with additional components like controllers are treated as parts of equipment rather than individual ICs.
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Import Tips & Compliance
• Verify exact memory density via datasheet to confirm HTS 8542.32.00.32 classification; slight variations may shift to adjacent subheadings
• Include RoHS compliance certificates and full technical specifications in documentation to avoid customs reclassification
• Package in anti-static materials and declare value based on silicon wafer content to prevent undervaluation penalties
Related Products under HTS 8542.32.00.32
Micron MT41K512M8 DRAM IC
A 4Gb DDR4 SDRAM device organized as 512Mx8, but classified by individual chip capacity in the 512Mb-1Gb range for tariff purposes, used in laptops and servers. HTS 8542.32.00.32 applies specifically to DRAM integrated circuits with this memory size range. It supports high-bandwidth operations for modern computing needs.
Hynix H5TQ4G43GFR DRAM Chip
SK Hynix 512Mx8 DDR4 DRAM integrated circuit for mobile and embedded systems, with capacity fitting the over 512 megabits to 1 gigabit threshold. This HTS code covers dynamic random access memories in this exact density range used for volatile data storage. Ideal for smartphones and automotive electronics.
Kingston KVR26S22S8 DRAM Die
Unpackaged silicon die version of 1Gb DDR4 DRAM for custom BGA packaging, capacity over 512Mb not over 1Gb. Classified under 8542.32.00.32 as electronic integrated circuit memory chips. Used in high-volume OEM manufacturing for servers.
Toshiba TC59LM816 1Gb Mobile DRAM
Low-power 1Gb DDR2 SDRAM IC for portable devices, fitting HTS 8542.32.00.32 for DRAM over 512 megabits to 1 gigabit. Provides volatile memory for tablets and wearables. Meets dynamic read-write random access specifications.
Renesas R1MP0108ASP DRAM Chip
Industrial 1Gb SDRAM with 8Mx8 organization for embedded controllers, classified in HTS 8542.32.00.32 for specified DRAM capacity. Supports extended temperature operation for factory automation. Pure electronic integrated memory circuit.
Infineon 1Gb Automotive Grade DRAM
AEC-Q100 qualified 1Gb DDR3L DRAM IC for vehicle infotainment and ADAS systems, capacity 512Mb-1Gb per HTS 8542.32.00.32. Radiation-tolerant design but primarily dynamic memory function. Used in harsh automotive environments.