512Mb LPDDR2 Mobile DRAM S9KLHBG08K2CA from China
Low Power DDR2 synchronous DRAM chip designed for smartphones and portable devices, featuring 512 megabit capacity with power-saving architecture. Falls under HTS 8542.32.0028 as it meets the DRAM classification criteria for memory capacity between 256 and 512 megabits. Essential for mobile computing with optimized power consumption.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Confirm low-power specifications don't affect memory classification
• Package in ESD-safe trays with proper labeling
• Validate against smartphone component lists for Section 301 tariffs