512Mb Buffer DRAM for SSD Controllers from China
512 megabit DRAM used as volatile cache buffer in solid state drive controllers for wear leveling and data mapping. Classified under HTS 8542.32.0028 meeting DRAM megabit capacity specifications. Enhances SSD random access performance.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Specify SSD controller compatibility in documentation
• Document endurance cycle specifications
• Distinguish from non-volatile NAND flash memory