Samsung K4B2G1646G-BCK0 256Mb DDR3 DRAM Chip from China
This is a 256 megabit DDR3 synchronous dynamic random access memory (DRAM) integrated circuit designed for high-performance computing applications. It falls under HTS 8542.32.0024 because it is a dynamic read-write random access memory with capacity over 128 megabits but not over 256 megabits. Commonly used in laptops and embedded systems for temporary data storage.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• Verify exact memory capacity via datasheet to confirm 8542.32.0024 classification; exceeding 256Mb shifts to higher subheading
• Include RoHS compliance certificates and full technical specs in documentation to avoid customs reclassification
• Package in anti-static materials to prevent damage; declare as 'monolithic ICs' not memory modules to stay in 8542