Renesas R1MP161664APG-80 256Mbit SDRAM Chip from China
A 256 megabit synchronous DRAM (SDRAM) IC with 80ns access time for industrial control systems. Falls under HTS 8542.32.0024 for its dynamic read-write memory capacity over 128 but not over 256 megabits. Used in embedded applications requiring reliable data buffering.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Provide pinout diagrams and electrical specs to confirm monolithic IC status
• Avoid misdeclaration as processors (8542.31); specify 'memory only' function
• Use HTS advisory rulings for novel DRAM variants to preempt disputes